Samsung MZ-V9E2T0BW 990 EVO 2TB NVMe M.2 2280 PCI-Express 5.0 x2 Solid State Drive
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990 EVO
Model2TB Only option
Out of stock
From this brand
Samsung · 25 products
Overview
Overview
- 2TB Storage Capacity
- 990 EVO
- M.2 2280 Form Factor
- NVMe 2.0 PCI-Express 4.0 x4 / 5.0 x2 Interface
- Up to 5,000MB/s Sequential Read Speed
- Up to 4,200MB/s Sequential Write Speed
- 4KB QD32 Random Read: Up to 700,000 IOPS
- 4KB QD32 Random Write: Up to 800,000 IOPS
- 4KB QD1 Random Read: Up to 20,000 IOPS
- 4KB QD1 Random Write: Up to 90,000 IOPS
- Up to 1.5 Million Hours Reliability (MTBF)
- AES 256-Bit Encryption
- Samsung V-NAND TLC Flash
- SMART & TRIM Support
- Auto Garbage Collection Algorithm
- 5 Year Limited Warranty or 1,200 TBW
SPECIFICATIONS
- Brand
- Samsung
- Series
- 990 EVO
- Model
- MZ-V9E2T0BW
Storage
- Drive Capacity
- 2TB
- Cache Memory
- HMB(Host Memory Buffer)
- Storage Memory
- Samsung V-NAND TLC
- Controller
- Samsung In-house Controller
Performance
- Interface
- PCIe 4.0 x4 / PCIe 5.0 x2
- NVMe 2.0
- Random Read Speed (4KB, QD32)
- Up to 700,000 IOPS
- Random Write Speed (4KB, QD32)
- Up to 800,000 IOPS
- Random Read Speed (4KB, QD1)
- Up to 20,000 IOPS
- Random Write Speed (4KB, QD1)
- Up to 90,000 IOPS
- Sequential Read Speed
- 5000 MB/s
- Sequential Write Speed
- 4200 MB/s
Features
Features
Additional information
Additional information
- Manufacturer's Site
- Visit the manufacturer's website
- Product Link
- Visit the manufacturer's page for this product
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